OptiMOS®2 Power-Transistor
IPB12CNE8N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
Product Summary
Features
V DS
• N-channel, normal level
85
R DS(on),max (TO252)
• Excellent gate charge x R DS(on) product (FOM)
V
12.4
ID
mΩ
67
A
• Very low on-resistance R DS(on)
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPB12CNE8N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
Package
PG-TO263-3
PG-TO252-3
PG-TO262-3
PG-TO220-3
Marking
12CNE8N
12CNE8N
12CNE8N
12CNE8N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Value
T C=25 °C
67
T C=100 °C
48
Pulsed drain current2)
I D,pulse
T C=25 °C
268
Avalanche energy, single pulse
E AS
I D=67 A, R GS=25 Ω
154
Reverse diode dv /dt
dv /dt
I D=67 A, V DS=68 V,
di /dt =100 A/µs,
T j,max=175 °C
6
Gate source voltage3)
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
T C=25 °C
A
mJ
kV/µs
±20
V
125
W
-55 ... 175
°C
55/175/56
IEC climatic category; DIN IEC 68-1
1)
Unit
J-STD20 and JESD22
2)
see figure 3
3)
Tjmax=150°C and duty cycle D=0.01 for Vgs2|I D|R DS(on)max,
I D=67 A
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is
vertical in still air.
Rev. 1.06
page 2
2008-06-23
Parameter
IPB12CNE8N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
Values
Symbol Conditions
Unit
min.
typ.
max.
-
3260
4340
-
608
809
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
C rss
-
44
66
Turn-on delay time
t d(on)
-
17
26
Rise time
tr
-
21
31
Turn-off delay time
t d(off)
-
32
48
Fall time
tf
-
8
12
Gate to source charge
Q gs
-
19
26
Gate to drain charge
Q gd
-
12
17
-
21
30
V GS=0 V, V DS=40 V,
f =1 MHz
V DD=40 V, V GS=10 V,
I D=33.5 A, R G=1.6 Ω
pF
ns
Gate Charge Characteristics 5)
V DD=40 V, I D=100 A,
V GS=0 to 10 V
nC
Switching charge
Q sw
Gate charge total
Qg
-
48
64
Gate plateau voltage
V plateau
-
5.5
-
Output charge
Q oss
-
46
61
nC
-
-
67
A
-
-
268
-
1
1.2
V
-
103
-
ns
-
255
-
nC
V DD=40 V, V GS=0 V
V
Reverse Diode
Diode continous forward current
IS
Diode pulse current
I S,pulse
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
5)
T C=25 °C
V GS=0 V, I F=67 A,
T j=25 °C
V R=40 V, I F=I S,
di F/dt =100 A/µs
See figure 16 for gate charge parameter definition
Rev. 1.06
page 3
2008-06-23
IPB12CNE8N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
2 Drain current
P tot=f(T C)
I D=f(T C); V GS≥10 V
140
70
120
60
100
50
80
40
I D [A]
P tot [W]
1 Power dissipation
60
30
40
20
20
10
0
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D=f(V DS); T C=25 °C; D =0
Z thJC=f(t p)
parameter: t p
parameter: D =t p/T
103
101
1 µs
102
10 µs
100
100 µs
101
0.5
Z thJC [K/W]
I D [A]
1 ms
DC
10 ms
0.2
0.1
10
10
-1
0.05
0.02
0
0.01
single pulse
10-1
10
10-2
-1
10
0
10
1
10
2
V DS [V]
Rev. 1.06
10-5
10-4
10-3
10-2
10-1
100
t p [s]
page 4
2008-06-23
IPB12CNE8N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I D=f(V DS); T j=25 °C
R DS(on)=f(I D); T j=25 °C
parameter: V GS
parameter: V GS
250
30
10 V
5V
8V
25
7V
200
5.5 V
150
R DS(on) [mΩ]
20
I D [A]
6.5 V
100
6V
15
6V
10
10 V
5.5 V
50
5
5V
4.5 V
0
0
1
0
2
3
4
5
0
20
V DS [V]
40
60
80
60
80
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); |V DS|>2|I D|R DS(on)max
g fs=f(I D); T j=25 °C
parameter: T j
100
200
80
150
60
I D [A]
g fs [S]
250
100
40
175 °C
50
20
25 °C
0
0
0
2
4
6
8
Rev. 1.06
0
20
40
I D [A]
V GS [V]
page 5
2008-06-23
IPB12CNE8N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R DS(on)=f(T j); I D=67 A; V GS=10 V
V GS(th)=f(T j); V GS=V DS
parameter: I D
30
4
3.5
25
830 µA
3
83 µA
2.5
V GS(th) [V]
R DS(on) [mΩ]
20
98 %
15
typ
2
1.5
10
1
5
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C =f(V DS); V GS=0 V; f =1 MHz
I F=f(V SD)
parameter: T j
105
103
25 °C
104
175 °C, 98%
I F [A]
C [pF]
Coss
103
175 °C
102
Ciss
25 °C, 98%
101
102
Crss
101
100
0
20
40
60
80
V DS [V]
Rev. 1.06
0
0.5
1
1.5
2
V SD [V]
page 6
2008-06-23
IPB12CNE8N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
13 Avalanche characteristics
14 Typ. gate charge
I AS=f(t AV); R GS=25 Ω
V GS=f(Q gate); I D=67 A pulsed
parameter: T j(start)
parameter: V DD
100
12
40 V
10
20 V
25 °C
100 °C
60 V
8
V GS [V]
I AS [A]
150 °C
10
6
4
2
1
0
1
10
100
1000
0
10
20
30
40
50
Q gate [nC]
t AV [µs]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS)=f(T j); I D=1 mA
100
V GS
Qg
V BR(DSS) [V]
95
90
V g s(th)
85
80
Q g(th)
Q sw
Q gs
75
-60
-20
20
60
100
140
Q g ate
Q gd
180
T j [°C]
Rev. 1.06
page 7
2008-06-23
IPB12CNE8N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
PG-TO220-3: Outline
Rev. 1.06
page 8
2008-06-23
IPB12CNE8N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
PG-TO262-3-1 (I²PAK)
Rev. 1.06
page 9
2008-06-23
IPB12CNE8N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
PG-TO-263 (D²-Pak)
Rev. 1.06
page 10
2008-06-23
IPB12CNE8N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
PG-TO252-3: Outline
Rev. 1.06
page 11
2008-06-23
IPB12CNE8N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 1.06
page 12
2008-06-23
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